SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW
SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW - Image 2
SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW - Image 3
SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW - Image 4
SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW - Image 5
SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW - Image 6

SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW

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Samsung NVMe SSD powered by newly designed in-house controller Up to 7,450 / 6,900 MB/s sequential read/write speed Power efficient SSD, reliable thermal control The Ultimate SSD Reach max performance of PCIe® 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller’s smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, to always keep you at the top of your game.

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