990 PRO PCIe 4.0 x4 M.2 Internal SSD Key Features 4TB Storage Capacity M.2 2280 Form Factor PCIe 4.0 x4 / NVMe 2.0 Interface Sequential Reads up to 7450 MB/s
Internal SSD
SAMSUNG 990 PRO 4TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 1.3 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3V Voltage, V-NAND 3-bit MLC | MZ-V9P4T0BW/AM
- Application: Client PCs, Game Consoles
- Capacity: 4,000GB
- Interface: PCIe Gen 4.0 x4, NVMe 2.0
- Dimension (WxHxD): 3.15 x 0.87 x 0.091 inches
1,165.20 د.إ
Technical Specifications
| Application | Client PCs, Game Consoles |
| Capacity | 4,000GB |
| Interface | PCIe Gen 4.0 x4, NVMe 2.0 |
| Dimension (WxHxD) | 3.15 x 0.87 x 0.091 inches |
| Weight | Max 0.02 lbs |
| Form Factor | M.2 (2280) |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung in-house Controller |
| Cache Memory | Samsung 4GB Low Power DDR4 SDRAM |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read (4KB, QD32) | Up to 1,600,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,550,000 IOPS |
| Random Read (4KB, QD1) | Up to 22,000 IOPS |
| Random Write (4KB, QD1) | Up to 80,000 IOPS |
| Operating Temperature | 32°F – 158°F (0 – 70 ℃) |
| Shock | 1,500 G & 0.5 ms (Half sine) |
| Management SW | Magician Software for SSD management |
| Warranty | 5-year Limited Warranty or 2400 TBW Limited Warranty |
| TRIM Support | Supported |
| S.M.A.R.T Support | Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
| WWN Support | Not supported |
| Device Sleep Mode Support | Yes |
| Average Power Consumption (system level) | Average: 6.5 W, Maximum: 8.6 W (Burst mode) |
| Power consumption (Idle) | Max. 55 mW |
| Allowable Voltage | 3.3 V ± 5% Allowable voltage |
| Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |

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SAMSUNG 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW








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