SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW - Image 2
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW - Image 3
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW - Image 4
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW - Image 5
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW - Image 6
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW - Image 7

SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW

  • Model Code (Capacity): MZ-V9S4T0BW (4TB)
  • Application: Client PCs
  • Form Factor: M.2 (2280)
  • Interface: PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0

1,026.10 د.إ

990 EVO Plus Specifications Model Code (Capacity) MZ-V9S4T0BW (4TB) General Features Application Client PCs Form Factor M.2 (2280)

SKU: SKU-FB2EA5C5 Category: Brand:

Technical Specifications

Model Code (Capacity) MZ-V9S4T0BW (4TB)
Application Client PCs
Form Factor M.2 (2280)
Interface PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimension (WxHxD) 80.15 x 22.15 x 2.38mm
Weight Max 9.0g
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory HMB (Host Memory Buffer)
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive)
WWN Support Not Supported
Device Sleep Mode Support Yes
Sequential Read Up to 7,250 MB/s
Sequential Write Up to 6,300 MB/s
Random Read (4KB, QD32) Up to 1,050,000 IOPS
Random Write (4KB, QD32) Up to 1,400,000 IOPS
Average Power Consumption Read 5.5W / Write 4.8W
Power Consumption (Idle) Typical 60mW for all capacities
Power Consumption (Sleep) Typical 5mW for all capacities
Allowable Voltage 3.3V ± 5%
Reliability (MTBF) 1.5 Million Hours
Operating Temperature 0 – 70°C
Shock Resistance 1,500 G & 0.5 ms (Half sine)

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